User:Rainer Klute/POET Technologies

Introduction/Overview

POET (Planar Opto Electronic Technology) is a revolutionary Gallium Arsenide (GaAs) process fully compatible with existing semiconductor design and manufacturing flows used to build electrical, optical, and electro-optical integrated circuits.

POET Technologies Inc. is the developer of an integrated circuit platform that it claims will power the next wave of innovation in integrated circuits, by combining electronics and optics onto a single chip for massive improvements in size, power, speed and cost. The company’s current IP portfolio includes more than 34 patents and 7 pending. POET’s core principles have been in development by Chief Scientist Dr. Geoff Taylor and his team at the University of Connecticut for the past 18 years, and are now nearing readiness for commercialization.

Technology

Benefits

• Up to 100x speed improvement over CMOS silicon (silicon hits a “power wall” at about 4 GHz that has limited circuit speeds to about 3.2 GHz over the last 10 years) Moore's law
• 10-100x power efficiency improvement over CMOS silicon (depending on application)
• Flexible application that can be applied to virtually any technical application, including memory, digital/mobile, sensor/laser and electro-optical, among many others
• No retrofit or other modifications to existing silicon fabs required – Since POET/PET are CMOS technologies fabricated using standard lithography techniques; they are easily integrated into current semiconductor production facilities extending the profitable utilization of fabrication equipment and production lines that would otherwise be considered at the end of life.
• The full POET process also includes PET, “Planar Electronic Technology” an electrical subset that can support CMOS, Bi-CMOS, and bipolar device fabrication, and offers cheaper, simpler process and fabrication options for applications that don’t require optical.

POET Potential Value For the OE Conversion Industry

• OE conversion modules are used whenever an electrical/electronic system (e.g. a compute server, storage array, switch, router, etc) is connected to an optical fiber network
• Today these modules consist of several discrete integrated circuits (ICs, or “chips”) of different materials and processes
• POET claims to offer the capability to integrate the entire OE conversion function from electrical connector to fiber connector in a single IC:
• An OE module based on the POET technology offers tremendous cost savings; depending on application overall module cost can be reduced by 60 to 90% through a combination of assembly, test, bill of materials, and reliability improvements
• POET can support integration of the entire OE interface into a larger digital device like a CPU, NPU, integrated switch, etc; this will enable (for the first time) single-chip systems with direct optical-fiber attachment

Products

→ CPU, Memory, Processor to Processor Optical Interconnect, Smart Phones, Network (Cell Towers, LANs, MANs), Fiber to the Home (FTTH), Infrared Sensors (Uncooled – SWIR, MWIR, LWIR), Coherent laser arrays for pumps, industrial applications, Commercial UV/VIS/NIR cameras, Medical Imaging Devices

→ Integrated photonics and electronics for: Radar and Lidar, Communications, Displays, Hardened computers and memory, Microwave and millimeter wave power sources

Industry

• Commercial – Progress in the commercial electronics industry over the past four decades has both driven and been driven by the industry’s ability to create and serve markets with faster, cheaper, and smaller monolithic integrated circuits. Each product advance in turn becomes the driver for the next wave of IC technology. Today however, this paradigm is falling short. Particularly in the arenas of optoelectronics and very high-speed mixed-signal circuits, current silicon ICs will not suffice, and no good monolithic technology exists. POET is perfectly positioned to address this technology void thus advancing product offerings in PCs, communications and many consumer devices which have been historically powered by technology breakthroughs such as POET.

• Military – POET provides military and aerospace systems with integrated digital, radio frequency (RF) and optical technologies in a single device. POET’s technology platform for optoelectronic integration exploits the optoelectronic and electronic behaviors of Gallium Arsenide (GaAs) semiconductor material. One of the benefits of this material, from a space electronics perspective, is that GaAs is significantly less susceptible to x-ray and gamma-ray total integrated dose (TID) radiation. GaAs is the long-standing choice for high-frequency (e.g. RF) devices and circuits. Important to the military is POET’s ability to integrate digital, RF, and optical technologies in a single device and this makes POET an important, high-performance solution that satisfies documented needs for multiple space systems and all Military Departments and Agency Tech Areas.

Manufacturing

• Both POET & PET are CMOS technologies fabricated using standard lithography techniques, they are highly amenable to current semiconductor production facilities: no retrofit/modifications to existing silicon fab’s to manufacture POET/PET-based wafers/devices.
• POET/PET support the fabrication of memory cells that can concurrently support all three types of memory operation (NVRAM,DRAM,SRAM).

Why POET?

Why will the world turn to a technology like POET? It is no secret that the worlds chip makers have been spending billions in an attempt to keep Moore's Law alive but can they keep going? There has been much discussion about the demise of Moore’s Law. Intel’s former chief architect Bob Colwell - in this article last year pronounced that Moore's Law would be left with no where to go by the year 2022 yet there are some who feel it will be sooner than that. There will be attempts to stack multiple chips and introduce advanced materials but high-performance compound devices are very expensive to make and only offer moderate improvements over incumbent chips. One of the big advantages POET presents to the market is that its process can leverage existing CMOS chipmaking equipment and it is fully compatible with existing semiconductor design and manufacturing flows. Dr Taylor the chief scientist behind Poet says it's benefits are analogous to the benefits of the first silicon integrated circuits, in that it eliminates connectors, solder joints, assembly, and multiple packaging steps while decreasing size, cost, complexity, and power. The only question is will the industry be able to change their minds and turn to this new technology rather than spending billions to continue pushing silicon and Moore's Law for ever increasing costs?

History

• On July 7, 2014, the Company announced the appointment of Mr. Ajit Manocha to the Board as Executive Vice Chairman.
• On July 1, 2014, the Company completed registration of its Form 20-F with the SEC.
• On April 7, 2014, the Company completed and made available, the POET Technology Design Kit (POET/TDK) documentation to the industry. POET/TDK provides complete documentation for the entire catalog of active electronic and electro-optical devices currently supported by the POET process. It comprises a comprehensive device parameter library, and enables potential customers and partners – including semiconductor foundries and device and library developers – to easily implement the POET process.
• On March 4, 2014, the Company filed new IP portfolio protection documents with the U.S. Patent and Trademark office (USPTO) and in other key jurisdictions to support strategic applications in POET-based quantum computing. * On March 4, 2014, the Company achieved the long-awaited milestone (MS-5) – the operation of its switching laser within the POET platform. This achievement has far-reaching implications for on-chip and optical communications applications. This single demonstration is a giant leap forward for an integrated circuit industry looking for ways to push complementary metal-oxide semiconductor (CMOS) processes past some challenging technical barriers.
• On February 24, 2014, the Company achieved the fabrication of infrared (IR) detectors, using its proprietary planar optoelectronic technology (POET) platform for monolithic fabrication of integrated electronic and optical devices on a single semiconductor wafer. Adding to its significance is the fact that the POET wafers used for the IR devices were fabricated by an independent foundry, BAE Systems’ Microelectronics Center in Nashua, New Hampshire.
• On June 27, 2013, the company announced that it had achieved Milestone 6. The new Milestone is the integration of the complementary inverter. Specifically, PTI successfully demonstrated complementary heterostructure field effect transistor based inverter operation using the POET process. This milestone was accelerated at the direction of the SSC, and forms the basis for all on-chip logic.
• On March 4, 2013, the Company announced that it had achieved Milestone 4, which is the next key milestone in POET. The Company announced that it achieved radio frequency and microwave operation of both n-channel and pchannel transistors. By reaching this milestone, 3-inch POET wafers fabricated at BAE Systems (Nashua, NH) yielded submicron n-channel and micron-sized p-channel transistors operating at frequencies of 42 GHz and 3 GHz respectively. These operating frequencies are expected to be improved even further to up to 300–350 GHz range for the n-channel device.
• On September 30, OPEL’s Shelton Connecticut facility was officially closed with all operations being established at ODIS’ R&D facility located at UCONN in Storrs, Connecticut
• In June 2012, OPEL made a “core strategic direction” change to its ODIS Division for the completion of the POET Platform and made a staff reduction in the solar business to aggressively reduce costs.
• In April 2012, ODIS officially received a Phase II award of $750,000 from National Aeronautics and Space Administration (“NASA”). This is a continuation of previous successful work done for NASA using the POET platform to develop RF/Optical phased arrays. ODIS technology will allow NASA to utilize both optical and RF functions on the same sensors.
• ODIS contracted with BAE Systems to produce a series of wafers from their foundry with devices developed using the POET technology. The first wafer lot was started in late August.
• ODIS Inc. (“OPEL Defense Integrated Systems”) presented two papers on the Planar Optoelectronic Technology (“POET”) at the SPIE Optics and Photonics Conference held August 21–25 in San Diego, California. SPIE is the international society for optics and photonics to advance light-based technologies.
• In June 2011, BAE Systems successfully produced working transistors on gallium arsenide wafers using ODIS, Inc.’s POET technology. ODIS is OPEL’s US affiliate company. This is the first step in validating the ability to commercialize products developed using the POET technology, which is capable of integrating optical and electronic circuits within the same chip.
• In April 2011, OPEL’s ODIS affiliate demonstrated an on chip laser capability for the first time in gallium arsenide. This proves ODIS’s POET technology is capability of producing a monolithic integrated circuit combining both electronic and optical elements.
• In March 2011, OPEL announced it was in receipt of a third party valuation for its POET Technology which had been developed by its U.S. affiliate ODIS Inc.
• In January 2011, ODIS was awarded a development contract from the National Aeronautics and Space Administration (“NASA”) that will involve a Phase I Award of $100,000 to develop Optoelectronic Infrastructure of RF/Optical phased arrays.
• In August 2010, ODIS was awarded a $150,000 SBIR contract to perform research into optical code technology for the United States Navy, based on its POET technology.
• In April 2010, ODIS was awarded an additional $750,000 SBIR contract to perform research into the development of optoelectronic directional couplers for optical switching fabrics for use by the United States Air Force and the Space Missile Command.
• In March 2010, ODIS was awarded a $100,000 SBIR contract to perform research into an optoelectronic ultra low power random access memory (“RAM”) for use by the United States Air Force.
• In January 2010, ODIS was awarded a $750,000 SBIR contract to continue the development of infrared sensor technologies for use by the United States Air Force and the Space Missile Command.
• in 2009 The ODIS subsidiary has continued to work with various US military agencies and two large defense contractors in identifying two new products they will support through funding to ODIS.
• Significant Events in 2008 were primarily solar related "The ensuing development phase of an Opel multi-junction solar cell will be based on a variation of Opel’s POET technology after the transfer is complete from Opel’s University of Connecticut (“UCONN”) Laboratory to a qualified fabrication source such as CPFC in Ottawa or BAE Systems. This variation will include an adjusted transistor design from the present POET process."
• Technology Development (University of Connecticut, Storrs, CT 1994 – Present)
• Lab facility and infrastructure design/build 1994-1997
• Completion of POET concept to include p-channel devices 1997
• Third party SBIR funding 1994-2000 (10 Phase I’s, 1 Phase II)equipment build up
• Founded OPEL Technologies (now POET Technologies) in 2000, first SBIR win 2001
• First investor funding $250K to fast track Phase I SBIR start team build
• Continued OPEL SBIR funding 2000-2006 to acquire equipment and team (expert team consisting of PhDs and highly experienced semiconductor process experts)
• ODIS formation following Canadian ownership to enable SBIR funding 2006-2012
• Patent portfolio build up from 2001–2013
• Partial OPEL funding 2012-2013
• Technology Development (Bell Labs, Holmdel, NJ 1986-1994)
• US Air force launched major funding initiative for OE technology development
• HFET concept in 1986 (demo 1987), BicFET laser (demo 1988)
• DOES (thyristor) laser (demo 1988)
• Technology platform established by 1992 (n-channel only)
• Technology Background and History (Bell Labs, Murray Hill, NJ 1979 - 1986)
• Starting at Bell Labs in MH-NJ in 1980-1985 in Si device lab (Lepselter/Smith) new BicFET device concept development with J.G. Simmons - BicFET patent and publication 1985
• Forced relocation from Si device development to III-V device research lab

Noteworthy News

POET Technologies Appoints Ajit Manocha as Executive Vice Chairman and Announces Other Board Updates July 7, 2014 - External Link

EMPIRE CLUB OF CANADA Dr, Geoff W. Taylor Chief Scientist of POET Technologies Inc was invited to present the POET platform as a keynote speaker of the Spirit of a Pioneer Series. - External Link

POET Technologies Provides Update on 100-nm Initiative May 27, 2014 - External Link

Interview with Peter Copetti, Midas Letter (CEO Podcast) April 23, 2014 - External Link

20 nm Dilemma Explained April 4, 2014 - - External Link

Small Cap Power Article on Poet Technologies: With electronics, the future is all about being smarter, faster, more efficient, and less expensive. This is what POET Technologies Inc. (TSXV: PTK) is set to achieve in developing its next-generation Gallium Arsenide semiconductor device technology called POET, or Planar Opto-Electronic Technology - - External Link

Integrated Optoelectronic Infrared Device Fabrication and Industrial Foundry Validation February 24, 2014 The achievement of these devices marks a significant milestone in development, realizing with a commercial foundry the integration of both electronic devices (n-channel transistors) with optical devices (IR detector) in a monolithic process. - External Link

Patents

• Thyristor Memory Cell Integrated (Application number: 20140050022)
• Optoelectric Integrated Circuit (Application number: 20140050242)
• Thyristor radiation detector array and applications thereof (Patent number: 8080821)
• Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation (Patent number: 7776753)
• Thyristor Radiation Detector Array and Applications Thereof (Application number: 20100123121)
• Optoelectronic circuit employing a heterojunction thyristor device to convert a digital optical signal to a digital electrical signal (Patent number: 7595516)
• Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation (Patent number: 7556976)
• Integrated circuit employing low loss spot-size converter (7551826)
• Integrated Circuit Employing Low Loss Spot-Size Converter (Application number: 20090003399)
• Imaging method utilizing thyristor-based pixel elements (Patent number: 7432539)
• Integrated circuit for programmable optical delay (Patent number: 7409120)
• Optoelectronic Circuit Employing a Heterojunction Thyristor Device to Convert a Digital Optical Signal to a Digital Electrical Signal (Application number: 20080135831)
• Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit (Patent number: 7385230)
• Optoelectronic circuit employing a heterojunction thyristor device to convert a digital optical signal to a digital electrical signal (Patent number: 7332752)
• Optoelectronic clock generator producing high frequency optoelectronic pulse trains with variable frequency and variable duty cycle and low jitter (Patent number: 7333733)
• Multifunctional optoelectronic thyristor and integrated circuit and optical transceiver employing same (Patent number: 7333731)
• THz detection employing modulation doped quantum well device structures (Patent number: 7262429)
• Imaging array utilizing thyristor-based pixel elements (Patent number: 7247892)
• Apparatus and a method of fabricating inversion channel devices with precision gate doping for a monolithic integrated circuit (Patent number: 7176046)
• Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation (Patent number: 7173293)
• Photonic sigma delta analog-to-digital conversation employing dual heterojunction thyristors (Patent number: 7064697)
• Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation (Patent number: 7015120)
• Modulation doped thyristor and complementary transistors combination for a monolithic optoelectronic integrated circuit (Patent number: 7012274)
• Photonic digital-to-analog converter employing a plurality of heterojunction thyristor devices (Patent number: 6995407)
• Semiconductor laser array device employing modulation doped quantum well structures (Patent number: 6977954)
• P-type quantum-well-base bipolar transistor device employing interdigitated base and emitter formed with a capping layer (Patent number: 6974969)
• Optoelectronic device employing at least one semiconductor heterojunction thyristor for producing variable electrical/optical delay (Patent number: 6954473)
• Monolithic integrated circuit including a waveguide and quantum well inversion channel devices and a method of fabricating same (Patent number: 6936839)
• Photonic serial digital-to-analog converter employing a heterojunction thyristor device (Patent number: 6873273)
• III-V charge coupled device suitable for visible, near and far infra-red detection (Patent number: 6870207)
• Optoelectronic circuit employing a heterojunction thyristor device that performs high speed sampling (Patent number: 6853014)
• High performance optoelectronic and electronic inversion channel quantum well devices suitable for monolithic integration (Patent number: 6849866)
• Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation (Patent number: 6841795)
• Heterojunction thyristor-based amplifier (Patent number: 6841806)
• HETEROJUNCTION THYRISTOR-BASED AMPLIFIER (Application number: 20040262593)
• Interference cancellation system employing photonic sigma delta modulation and optical true time delay (Application number: 20040146237)
• P-type quantum-well-base bipolar transistor device employing interdigitated base and emitter formed with a capping layer (Application number: 20040135161)
• Optoelectronic circuit employing a heterojunction thyristor device to convert a digital optical signal to a digital electrical signal (Application number: 20040094760)
• Optoelectronic device employing at least one semiconductor heterojunction thyristor for producing variable electrical/optical delay (Application number: 20040081216)
• Grating coupled vertical cavity optoelectronic devices (Patent number: RE38682)
• Photonic digital-to-analog converter employing a plurality of heterojunction thyristor devices (Application number: 20040079961)
• Imaging array utilizing thyristor-based pixel elements (Application number: 20040079971)
• Optoelectronic clock generator producing high frequency optoelectronic pulse trains with variable frequency and variable duty cycle and low jitter (Application number: 20040081467)
• Photonic serial digital-to-analog converter employing a heterojunction thyristor device (Application number: 20040079939)
• Optoelectronic circuit employing a heterojunction thyristor device that performs high speed sampling (Application number: 20040079963)
• Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation (Application number: 20040082091)
• Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation (Application number: 20040079954)
• Modulation doped thyrisor and complementary transistors combination for a monolithic optoelectric integrated circuit (Application number: 20040075090)
• Monolithic integrated circuit including a waveguide and quantum well inversion channel devices and a method of fabricating same (Application number: 20030123829)
• III-V charge coupled device suitable for visible, near and far infra-red detection (Application number: 20030020099)
• Apparatus and a method of fabricating inversion channel devices with precision gate doping for a monolithic integrated circuit (Application number: 20030006407)
• Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit (Patent number: 6479844)
• MODULATION DOPED THYRISTOR AND COMPLEMENTARY TRANSISTOR COMBINATION FOR A MONOLITHIC OPTOELECTRONIC INTEGRATED CIRCUIT (Application number: 20020121647)
• Grating coupled vertical cavity optoelectronic devices (Patent number: 6031243)
• Taper isolated ram cell without gate oxide (Patent number: 4328511)
• Buried storage punch through dynamic ram cell (Patent number: 4203125)

Recently filed

• Closed Loop Rectangular Resonators in POET & Thyristor Memory
• Fiber Optic Coupling Array
• Quantum Dot Lasers in POET for 1310-1550 nm Operation
• Universal Memory Cell in POET for DRAM, SRAM and NVRAM Applications
• IR Imaging Structures in POET based on Quantum Dot Epitaxy
• Whispering Gallery Mode Resonators in the Planar OptoElectronic Technology; and Implementation of 1550 nm Optoelectronics in the Planar OptoElectronic Technology

The Company

About

• POET became a publicly traded company and shares of POET began trading on June 26, 2007 via RTO.
• POET Technologies Inc. is a fabless designer of the POET platform, a best of breed, leap forward next generation compound semiconductor.
• POET Technologies office is in Toronto, Ontario, Canada, and operations in Storrs, CT, in two segments, designing III-V semiconductor devices for military, industrial and commercial applications.
• The Company's common shares trade on the TSX Venture Exchange under the symbol "PTK" and on the OTCQX under the symbol "POETF".
• POET Technologies partners with BAE Systems an international defense services company that is a global leader in military electronic systems design, development, manufacturing and integration.

Board of Directors

Peter Copetti – Executive Chairman and CEO

Peter Copetti has over 25 years of capital markets and management experience in key leadership roles. He has been the chief architect and strategist of the transformation at POET Technologies, since joining the company in June 2012. Mr. Copetti was personally responsible for the restructuring of both secured and unsecured debt, negotiated new equity infusion into the company, and re-focused the company on its original technical vision of monolithic optoelectronic integration, leading to POET’s resurgence as a leading platform innovator in the semiconductor industry. Mr. Copetti is Chairman of the Special Strategic Committee responsible for maximizing the shareholder value of the POET Platform Technology.

Ajit Manocha - Executive Vice Chairman

Mr. Manocha has over 35 years of experience in the semiconductor industry with deep knowledge of semiconductor technology and operations. He has worked in all aspects of the business from Research, to Applied Development, to Manufacturing, to worldwide sales to Global Supply Chain & IT, and his most recent role has been as CEO of GlobalFoundries (multi Billion US$ revenue). He has wealth of experience by working in companies like AT&T, Bell Labs/Microelectronics, Philips Semiconductors (now known as NXP), Spansion, and GlobalFoundries. He has managed at various executive levels and successfully led very small organizations with <15 people to very large organizations with well over 25,000 people. Having worked in three continents (Asia, Europe and North America), he has deep knowledge of diversity and various countries’ cultures. He has led more than 20 M&As successfully. He has also served on various boards as director and chairman. He is currently representing GlobalFoundries on the Semiconductor Industry Association Board and also serving on the U.S. Presidential Committee for Advanced Manufacturing Partnership.

He is well established in the industry and known as a visionary, thoughtful leader and has strong credibility with customers. He has a passion for people to lead businesses and grow shareholders’ value. He is often labeled as “Mr. FIX IT” – His most recent achievement was to very successfully turnaround GlobalFoundries (which was economically challenged in 2011) within 2+ years. GlobalFoundries under Mr. Manocha’s watch gained significantly higher revenue (2nd ranking) with the development of several new tier-1 customers.

Leon M. Pierhal – President

Mr. Pierhal has over forty years of management experience in semiconductor, telecommunications and computing technology development companies such as Amdahl Corporation, Intel Corporation, Masstor Systems Corporation, and Jupiter Technology. As a senior management executive with broad international experience, Mr. Pierhal has had direct responsibility for P&L, sales and marketing, and corporate development for several major companies requiring strategic expertise. He has experience with capitalizing and launching technology startups, mergers and acquisitions of technology companies, as well as turning around emerging companies by developing new sales divisions, channels and strategic partners. Mr. Pierhal has assisted a significant number of companies with capital formation and re-capitalization from private and public sources. He contributed exceptional strategic and tactical vision, strong team development and leadership skills. In addition, Mr. Pierhal has impressive experience in the area of technology startup company development and serves as an Outside Board Member to several such firms as well.

Dr. Samuel Peralta – Director

Samuel Peralta has a Ph.D. in physics from the University of Wales; with business certificates from Rotman School of Management and the Schulich School of Business. He brings technical continuity to POET’s board, with industry-recognized expertise in communications, inspection and robotics, in mobile software and hardware, and business transformation. Dr. Peralta is also currently business director for Kinectrics Inc. and sits on the board of directors of Windrift Bay Limited.

John F. O’Donnell – Director

Mr. O’Donnell earned a BA (Economics) and a LLB and has practiced law in the City of Toronto since 1973. He is currently counsel to Stikeman Keeley Spiegel Pasternack LLP. His practice is primarily in the field of corporate and securities law and, as such, he is and has been counsel to several publicly traded companies. Mr. O’Donnell is currently also a director of Nerium Biotechnology, Inc.

Chris Tsiofas – Director

Mr. Tsiofas earned a Bachelor’s of Commerce Degree from the University of Toronto in 1991 and has been a member of the Institute of Chartered Accountants of Ontario since 1993. He is a partner with the Toronto Chartered Accountancy firm of Myers Tsiofas Norheim LLP. Mr. Tsiofas has also been involved as an operating partner in various private enterprises over the years and is able to offer managerial and operational insight.

Dr. Adam Chowaniec – Director

He was previously the founding Chief Executive Officer (CEO) and Chairman of Tundra Semiconductor (acquired by Integrated Device Technology), Chairman of Zarlink (acquired by Microsemi), and Chairman of Bel Air Networks (acquired by Ericsson). Previously, he was President and CEO of Calmos Systems, acquired by Newbridge Networks and renamed Newbridge Microsystems, where he served as President and as a Vice President of Newbridge Networks. He has also served on the boards of SiberCore Technologies, Liquid Computing, Microbridge, GEAC and Amiga. He currently serves on the boards of Solantro Semiconductor. Dr. Chowaniec holds an M.Sc. in Electrical Engineering from Queen’s University, as well as both a B.Sc. and a Ph.D. from the University of Sheffield. In 2010, he was recognized by the California Computer Museum as one of the founding fathers of the personal computer.

Dr. Geoff Taylor – Director

He is Chief Scientist at POET Technologies and has led development of the Planar Optoelectronic Technology (POET) platform over the past two decades, directing a focused team at the ODIS subsidiary of POET. Dr. Taylor possesses an extraordinary technical background made-up of 30 years of design and development experience in electronic and optical device physics, circuit design, opto-electronic technology, materials and applications. He is concurrently a Professor of Electrical Engineering and Photonics at the University of Connecticut and is responsible for ODIS’ development efforts at the gallium arsenide (GaAs) growth and fabrication facility. With over 150 papers in the world’s most respected journals, and dozens of patents, Dr. Taylor is widely regarded as the world’s leading authority on GaAs solid-state physics, III-V opto-technology, as well as the pioneer in the development of monolithic integrated opto-electronic circuits.

Previously, Dr. Taylor served as a Distinguished Member of the technical staff at AT&T Bell Labs, developing inversion channel technology for III-V materials. At Honeywell and Texas Instruments he helped to develop critical optical technology for the Jupiter Orbital Probe as well as the development of key circuits and devices for very-large-scale-integrated (VLSI) chips. Dr. Taylor holds a Ph.D. in Electrical Engineering and an M.A.Sc. in Electrical Engineering from the University of Toronto and a B.Sc. in Electrical Engineering from Queen’s University.

References

1. poet-technologies Investor Relations web page - Exterior Link
2. uk reuters article published on Monday March 31, 2014 - Exterior Link
3. poet-technologies markets webpage - Exterior Link
4. poet-technologies corporate overview - PDF Link
5. Listing of Patents owned by the lead scientist of POET Technologies - Exterior Link
6. Optical-Interconntion-of-High-Speed-Circuits - PDF Link
7. Compound Semiconductor Article June 2014 - PDF Link