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The Bosch process is a microfabrication technique that employs a switched chemistry and high density plasma to etch deep, high aspect ratio features into silicon. It is a type of deep reactive-ion etching (DRIE), and the terms DRIE and Bosch process are often used interchangeably. It was developed by Franz Laermer and Andrea Urban at Robert Bosch GmbH, from which the Bosch process derives its name. Originally created as part of a project to design MEMS airbag sensors, the Bosch process has since become ubiquitous in the MEMS industry, enabling many diverse applications. In acknowledgement of this wide-ranging impact, Laermer and Urban were recognized in 2007 as European Inventor(s) of the Year in the industry category.[1]
The Bosch process is patented,[2] so a license is required to run the process. Generally, the licensing cost is included in the equipment cost of equipment that runs the process.[3]
History
editProcess
editinclude at least one schematic image
Applications
editFuture?
editProcessing inspired by the Bosch Process
editReferences
edit- ^ Winners of the European Inventor of the Year 2007 awards, European Patent Office, 18 April 2007 (accessed 8 August 2008).
- ^ Patented in multiple countries:
- United States: Laermer, F. and Schilp, A., "Method of Anisotropically Etching Silicon,", US5501893, issued 1996.
- Germany: Laermer, F. and Schilp, A., "Verfahren zum anisotropen Ätzen von Silicium," DE4241045, issued 1994.
- Japan: Laermer, F. and Schilp, A., "Anisotropic Etching Method for Silicon," JP2007129760, issued 2007.
- ^ Walker, M.J., "Comparison of Bosch and cryogenic processes for patterning high aspect ratio features in silicon," Oxford Instruments Plasma Technology, 2001.