Vacuum-Channel Transistor
editA vacuum channel transistor is a [transistor] that instead of using a semiconductor as a channel uses vacuum as a channel. The vacuum channel transistors are expected to perform better than the solid-state transistors.
Different geometry of the vacuum channel transistors: MOS with holes, lateral geometry, all-around gate, vertical channel.
Self notes:
Use the table show in the information material of the paper [2017] for comparing the performance of various vacuum channel transistors.
1. First paper published on April 2012 reporting a working vacuum channel transistor[1]
2. Second paper published on April 2012 reporting a working vacuum channel transistor[2]
3. A third paper published on 2014 reporting a new design of vacuum channel transistor [3].
4. Recent article published on March 2017 on a new desing of vacuum channel transistor[4]
History
editReference
edit- ^ Srisonphan, Siwapon; Jung, Yun Suk; Kim, Hong Koo (2012-08-01). "Metal-oxide-semiconductor field-effect transistor with a vacuum channel". Nature Nanotechnology. 7 (8): 504–508. doi:10.1038/nnano.2012.107. ISSN 1748-3387.
- ^ "Vacuum nanoelectronics: Back to the future?—Gate insulated nanoscale vacuum channel transistor". Applied Physics Letters. 100 (21): 213505. 2012-05-21. doi:10.1063/1.4717751. ISSN 0003-6951.
- ^ Park, I. J.; Jeon, S. G.; Shin, C. (2014-12-01). "A New Slit-Type Vacuum-Channel Transistor". IEEE Transactions on Electron Devices. 61 (12): 4186–4191. doi:10.1109/TED.2014.2361912. ISSN 0018-9383.
- ^ Han, Jin-Woo; Moon, Dong-Il; Meyyappan, M. (2017-03-23). "Nanoscale Vacuum Channel Transistor". Nano Letters. doi:10.1021/acs.nanolett.6b04363. ISSN 1530-6984.
- ^ Split collector vacuum field effect transistor, Apr 30, 1991, retrieved 2017-04-10
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