Talk:Centre for Device Thermography and Reliability

Contested deletion

This page should not be speedily deleted because it is about a research group that is important because of the unique methods they apply to study the reliability of III-V semiconductor devices. As we know, semiconductor devices are the heart of today's computers and systems and a time has come when the scaling of traditional semiconductor i.e. Silicon is no longer possible because it has already reached the atomistic level. Various alternative semiconductors or compound semiconductors have been suggested, but none meet the reliability standard of silicon. Thus the study of reliability of alternate semiconductors, (such as GaAs, AlGaN, AlGaS, SiC) devices are of paramount importance to the community. This particular research group at Bristol for the first time in the world used Raman Thermography to understand the reliability of GaN, GaAs and SiC devices. These devices are at the moment, the most reliable to produce power and microwave devices and may fill the vacuum Silicon will leave. The group publishes tons of papers in some of the most revered journals and conferences of the world namely: IEEE Electron Device Letters, IEEE Transactions on Electron Devices, APS Physics, IEDM etc. Some of the alumni of this group have went on to hold important positions in industries such as Infineon, NXP, research labs such as imec, Belgium and Government agencies such as the European Space Agency and NASA. Butler's World (talk) 05:46, 16 September 2014 (UTC)