Tetrakis(trimethylsilyloxy)silane

Tetrakis(trimethylsilyloxy)silane (TTMS) is an organosilicon compound with the formula Si[OSi(CH3)3]4. This colourless liquid is used as a reagent in organic synthesis.[2]

Tetrakis(trimethylsilyloxy)silane
Names
Preferred IUPAC name
Tetrakis(trimethylsilyl) silicate
Identifiers
3D model (JSmol)
Abbreviations TTMS
ChemSpider
EC Number
  • 222-613-4
UNII
  • InChI=1S/C12H36O4Si5/c1-17(2,3)13-21(14-18(4,5)6,15-19(7,8)9)16-20(10,11)12/h1-12H3
    Key: VNRWTCZXQWOWIG-UHFFFAOYSA-N
  • C[Si](C)(C)O[Si](O[Si](C)(C)C)(O[Si](C)(C)C)O[Si](C)(C)C
Properties
C12H36O4Si5
Molar mass 384.841 g·mol−1
Appearance Colourless liquid
Density 0.87 g cm−3[1]
Melting point −60 °C (−76 °F; 213 K)
Boiling point 103–106 °C (217–223 °F; 376–379 K)
Vapor pressure 8.96 Pa (25°C)
1.389
Hazards
GHS labelling:
GHS07: Exclamation mark
Warning
H315, H319, H335, H413
P261, P264, P271, P273, P280, P302+P352, P304+P340, P305+P351+P338, P312, P321, P332+P313, P337+P313, P362, P403+P233, P405, P501
Flash point 80 °C (176 °F; 353 K)
Related compounds
Related compounds
Hexamethyldisiloxane

Octamethylcyclotetrasiloxane

Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Application

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TTMS can be used for thin film coating with a nanostructured silicon dioxide prepared by plasma-enhanced chemical vapor deposition (PECVD) at atmospheric pressure.[3]

References

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  1. ^ "TETRAKIS(TRIMETHYLSILOXY)SILANE - 3555-47-3".
  2. ^ Fleming, I (2002). Science of Synthesis: Houben-Weyl Methods of Molecular Transformations. Stuttgart: Georg Thieme Verlag. p. 1060. ISBN 3-13-112171-8.
  3. ^ Schäfer, J; Hnilica, J; Sperka, J; Quade, A; Kudrle, V; Foest, R; Vodak, J; Zajickova, L (2016). "Tetrakis(trimethylsilyloxy)silane for nanostructured SiO2-like films deposited by PECVD at atmospheric pressure". Surface & Coatings Technology. 295 (295): 112–118. doi:10.1016/j.surfcoat.2015.09.047.
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