Talk:LDMOS

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LDMOS does not require epitaxial layers for fabrication. High angle ion implantation is used to form the lateral doping profiles along the edges of the transistor gates to increase breakdown voltage.

TriQuint does not make or offer LDMOS devices. They make only GaAs devices.

Cree no longer makes or offers LDMOS power transistors. They still make SiC and GaN RF power devices (as of 2008).

Sources: See numerous abstracts and publications from the Strategy Analytics GaAs & Compound Semiconductor market research service, and the RF & Wireless Component market research services. Indagator (talk) 17:56, 11 July 2008 (UTC)Reply

TriQuint and Cree edit

Latest comment: 5 years ago2 comments2 people in discussion

TriQuint doesn't make LDMOS devices. See http://www.triquint.com/prodserv/types/discrete_fets/. I'll remove the link. Cree has closes its silicon business, and therefore no more LDMOS devices; see http://www.cree.com/press/press_detail.asp?i=1143574077093. --HelgeStenstrom (talk) 17:41, 1 April 2011 (UTC)Reply

Does anyone know this components application in lower frequency applications, such as HF amplification? The entry makes no reference of any uses such as terrestrial radio or ham.199.58.81.144 (talk) 19:57, 22 February 2019 (UTC)JackrabbitReply

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