Gérald Bastard (born 3 April 1950 in Paris[1]) is a highly cited[2] French physicist known for his work on semiconductor heterostructures. As of 2011, he is a research director at the Department of Physics of the École Normale Supérieure in Paris.

Gérald Bastard
Scientific career
ThesisObservation des effets de non-centrosymétrie et des niveaux accepteurs dans Hg Te par l'étude de la magnéto-absorption (1974)

Education

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Bastard completed his Ph.D. in 1974 at Université Paris Diderot, titled Observation des effets de non-centrosymétrie et des niveaux accepteurs dans Hg Te par l'étude de la magnéto-absorption.[3]

Awards

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In 2000, Bastard and Emilio E. Mendez won the International Symposium on Compound Semiconductors Quantum Device Award "for pioneering work on electric-field induced optic effects in quantum wells and superlattices (quantum-confined Stark effect and Wannier–Stark localization)".[4]

Books

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  • Bastard, Gerald (1991). Wave Mechanics Applied to Semiconductor Heterostructures. Wiley-Interscience. ISBN 978-0-470-21708-5.

References

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  1. ^ Bastard, Gerald at ISIHighlyCited.com. Accessed 2011-01-26[dead link]
  2. ^ "B - Research Analytics - Thomson Reuters". ISI Highly Cited. Retrieved 28 February 2014.
  3. ^ Bastard, Gérald (1974). Observation des effets de non-centrosymétrie et des niveaux accepteurs dans Hg Te par l'étude de la magnéto-absorption (Thesis). OCLC 708311121.
  4. ^ "Awards: phys. stat. sol. (c) 7/10". Physica Status Solidi C. 7 (10): 2353–2357. 2010. Bibcode:2010PSSCR...7.2353.. doi:10.1002/pssc.201090015.
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