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Summary
| Description | Stochastic defects limit the resolution of EUV. At 36 nm pitch, the defect rate does not drop below a floor level ~1e-9. Unopened trenches at larger pitches become less likely at larger widths, while broken resist lines at dense pitches become more likely at the same time. Stochastic defects apply to contact as well as line patterns. Ref.: P. De Bisschop and E. Hendrickx, Proc. SPIE 10957, 109570E (2019). |
| Date | |
| Source | PowerPoint |
| Author | Guiding light |
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Original upload log
The original description page was here. All following user names refer to en.wikipedia.
| Date/Time | Dimensions | User | Comment |
|---|---|---|---|
| 2019-04-15 14:56:39 | 767 × 630 | Guiding light | |
| 2019-04-15 13:01:30 | 1486 × 326 | Guiding light | |
| 2019-04-14 10:15:46 | 377 × 326 | Guiding light | |
| 2019-04-13 15:57:48 | 377 × 326 | Guiding light | Uploading a self-made file using [[Wikipedia:File_Upload_Wizard|File Upload Wizard]] |
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 16:02, 2 April 2020 | | 767 × 630 (30 KB) | Hippymoose17 | Transferred from en.wikipedia (MTC!) (1.1.0) |
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