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| Description |
English: Niemeyer-Dolan (angular evaporation) technique for the fabrication of single electron transistors. a: Side view, cut along the current path. b: Side view, cut perpendicular to the current path, and showing the resist mask and the layers deposited on it during the evaporations. Note how these depositions change the cross section of the openings in the mask. c: Top view, indicating the cut planes for views a and b. Drawings are approximately to scale in all dimensions. |
| Date | Göteborg 1999 |
| Source | Created by Torsten Henning and published in Charging effects in niobium nanostructures, PhD thesis, Mikroelektronik och Nanovetenskap, Chalmers Tekniska Högskola AB och Göteborgs Universitet, Göteborg 1999. Full text available online [1] as www.arxiv.org e-print cond-mat/9901308. |
| Author | Torsten Henning |
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 15:34, 12 October 2005 | | 1,704 × 2,108 (103 KB) | DrTorstenHenning | {{English}} Niemeyer-Dolan (angular evaporation) technique for the fabrication of single electron transistors. '''a''': Side view, cut along the current path. '''b''': Side view, cut perpendicular to the current path, and showing the resist mask and the l |
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