Description7nm node metal pattern shifts through EUV focus.png
English: A metal layer targeting 16 nm CD patterned with EUV SMO single exposure is able to have a 100 nm CD 200 nm pitch overlay mark more in line with the 16 nm half-pitch metal lines, but not every feature in the same layer is easily captured within +/-1 nm shift over +/- 40 nm focus window. Ref.: W. Gillijns et al., Proc. SPIE vol. 10143, 1014314 (2017).
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