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File:Rtd seq v3.gif

Rtd_seq_v3.gif(453 × 362 pixels, file size: 354 KB, MIME type: image/gif, looped, 40 frames, 10 s)

Summary[edit]

Description
English: A working mechanism of a Resonant Tunneling Diode device and negative differential resistance in output characteristic. Notice the negative resistance characteristic after the first current peak due to reduction of first energy level below source fermi level with gate bias.
Date
Source Tool:Resonant Tunneling Diode Simulation with NEGF simulator on www.nanoHUB.org. Link: http://nanohub.org/resources/8799
Author Saumitra R Mehrotra & Gerhard Klimeck
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Date/TimeThumbnailDimensionsUserComment
current01:15, 2 February 2010Thumbnail for version as of 01:15, 2 February 2010453 × 362 (354 KB)Beatnik8983{{Information |Description={{en|1=A working mechanism of a Resonant Tunneling Diode device and negative differential resistance in output characteristic. Notice the negative resistance characteristic after the first current peak due to reduction of first
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