Deathnium is a name given by early electronic engineers to a trap in semiconductors that reduces the lifetime of both electron and hole charge carriers. It is considered the fifth of the imperfections that must be considered in semiconductor crystals to understand semiconductor effects along with holes, electrons, donors, and acceptors.[1] Deathnium hastens the establishment of equilibrium between holes and electrons.[1] This condition was not anticipated but it emerged during the invention of bipolar junction transistor after the influence of deep-trap impurities introduced by contamination of the manufacturing machinery, which reduced the lifetime of semiconductor.[2]


  1. ^ a b Nobel Lectures in Physics, Volumes 1942-1962. Singapore: World Scientific. 1998. p. 347. ISBN 9810234031.
  2. ^ Cullis, Roger (2007). Patents, Inventions and the Dynamics of Innovation: A Multidisciplinary Study. Cheltenham, UK: Edward Elgar Publishing. p. 272. ISBN 9781845429584.
  • Transistor Electronics: Imperfections, Unipolar and Analog Transistors, Shockley, W., Bell Telephone Laboratories, Inc., Murray Hill, N.J.; Proceedings of the IRE Volume: 40, Issue: 11 pp: 1289-1313 (Nov. 1952) doi:10.1109/JRPROC.1952.273954

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