180 nm process

  (Redirected from 180 nm)

The 180 nm process refers to the level of MOSFET (CMOS) semiconductor process technology that was commercialized around the 1998–2000 timeframe by leading semiconductor companies, starting with TSMC[1] and Fujitsu,[2] then followed by Sony, Toshiba,[3] Intel, AMD, Texas Instruments and IBM.

The origin of the 180 nm value is historical, as it reflects a trend of 70% scaling every 2–3 years. The naming is formally determined by the International Technology Roadmap for Semiconductors (ITRS).

Some of the first CPUs manufactured with this process include Intel Coppermine family of Pentium III processors. This was the first technology using a gate length shorter than that of light used for lithography (which has a minimum of 193 nm).

Some more recent microprocessors and microcontrollers (e.g. PIC) are using this technology because it is typically low cost and does not require upgrading of existing equipment.

HistoryEdit

In 1988, an IBM research team led by Iranian engineer Bijan Davari fabricated a 180 nm dual-gate MOSFET using a CMOS process.[4] The 180 nm CMOS process was later commercialized by Taiwan Semiconductor Manufacturing Company (TSMC) in 1998,[1] and then Fujitsu in 1999.[2]

Processors using 180 nm manufacturing technologyEdit

ReferencesEdit

  1. ^ a b "0.18-micron Technology". TSMC. Retrieved 30 June 2019.
  2. ^ a b 65nm CMOS Process Technology
  3. ^ a b "EMOTION ENGINE® AND GRAPHICS SYNTHESIZER USED IN THE CORE OF PLAYSTATION® BECOME ONE CHIP" (PDF). Sony. April 21, 2003. Retrieved 26 June 2019.
  4. ^ Davari, Bijan; et al. (1988). "A high-performance 0.25 micrometer CMOS technology". International Electron Devices Meeting.


Preceded by
250 nm
CMOS manufacturing processes Succeeded by
130 nm