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Carlos A. Paz de Araújo is a Brazilian American scientist and inventor[1] with nearly 600 patents registered in his name. Most of them are associated with nanotechnology, particularly a ferroelectric memory chip (FeRAM)[2]
Career and inventions edit
As a professor of electrical and computer engineering at the University of Colorado at Colorado Springs, Paz de Araújo's work has led to the development of integrated circuit-embedded FeRAMs used in smart cards, electronic money and other products.[3]
Paz de Araújo is the founder of RAMTRON and Symetrix Corporations. He identified SrBi2Ta203 (SBT), the ferroelectric material used in the most advanced FeRAMs and which resolves the fatigue problem and fabrication difficulties in memory chips, ensuring that stored information is retained.[4]
He and his colleagues were the first to use ferroelectric thin films as high-k capacitors for cellular phones, integrated into a set of gallium arsenide chips. The resulting devices were 50 times smaller and drew a fraction of the power of their predecessors. Working with scientists at Matsushita Electric Industry Company in Japan, he adapted SBT technology to contactless smart cards that permit information to be continuously upgraded during use.[5]
Paz de Araujo is the editor of Integrated Ferroelectrics, and chairman of the International Symposium on Integrated Ferroelectrics. He has edited two books on integrated ferroelectrics and is the author of several papers on ferroelectrics.[6][7]
Paz de Araujo holds a Bachelor's, Master's and Doctoral degrees in Electrical Engineering from the University of Notre Dame in South Bend, Indiana.[8]
In 2006 Paz de Araujo won the Institute of Electrical and Electronics Engineers IEEE Daniel E. Noble Award.[9]
References edit
- ^ a b "Gênio ou sonhador?" (in Portuguese). ISTOÉ Dinheiro. 2009. Retrieved July 7, 2009.[permanent dead link]
- ^ Scott, James F.; Paz de Araujo, Carlos A. (1989-12-15). "Ferroelectric Memories". Science. 246 (4936): 1400–1405. Bibcode:1989Sci...246.1400S. doi:10.1126/science.246.4936.1400. ISSN 0036-8075. PMID 17755995. S2CID 220085145.
- ^ "Carlos Paz de Araújo: The future of the future". revistapesquisa.fapesp.br. Retrieved 2023-05-04.
- ^ "Symetrix About US". Symetrix. Retrieved 9 September 2023.
- ^ "US Patent Application for FERROELECTRIC SEMICONDUCTING FLOATING GATE FIELD-EFFECT TRANSISTOR Patent Application (Application #20220199631 issued June 23, 2022) - Justia Patents Search". patents.justia.com. Retrieved 2023-05-04.
- ^ "Selected Papers from Eleven Years of the Proceedings of the International Symposium of Integrated Ferroelectronics". Routledge. Retrieved 9 September 2023.
- ^ "Carlos Paz De Araujo". Aminer. Retrieved 9 September 2023.
- ^ "Araujo Awarded CU Distinguished Professorship". University of Colorado Colorado Springs. Retrieved 9 September 2023.
- ^ Paz de Araugo, Carlos A. (2023). "IEEE LEVEL AWARDS" (PDF). Institute of Electrical and Electronics Engineers. Retrieved 4 May 2023.